Accession Number : AD0821498
Title : STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Descriptive Note : Special rept. (Part 1 and Part 2),
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : VAN DER Ziel, A.
Report Date : SEP 1967
Pagination or Media Count : 146
Abstract : Part I discusses noise in p-i-n junction diodes in which the i-region is so short that the characteristic varies as (exp(eV/beta kT)-1) with beta is similarly ordered to 1 at low voltages and with beta slowly decreasing at higher voltages. It is shown that the noise can be represented as 1 sq = 2eI delta f + 4 beta kT(g-g sub o) delta f. Here the first term represents shot noise and the second term thermal noise of the incremental conductance (g-g sub o). Part II discusses noise in p-n-p-n diodes. The noise is 1/f noise and is quite large. There are two enhancement processes at work: (1) The internal feedback in the device gives already an enhancement of the noise emf for open input. (2) Because of the very small internal resistance R sub in of the device, the short-circuit noise current is very large. There is a sharp peak in the noise current where R sub in goes through zero. (Author)
Descriptors : *NOISE(RADIO), *SEMICONDUCTOR DIODES, SOLID STATE PHYSICS, SILICON, SEMICONDUCTORS, ELECTRICAL RESISTANCE, CAPACITANCE, THERMAL PROPERTIES, SPACE CHARGE, DIRECT CURRENT, ELECTRICAL IMPEDANCE, TEMPERATURE, TEST EQUIPMENT.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE