Accession Number : AD0821577
Title : STUDY AND INVESTIGATION OF THE DEPENDENCE OF SEMICONDUCTOR SURFACE STABILITY ON OXIDE GROWTH.
Descriptive Note : Final rept. 4 Apr 66-3 Apr 67,
Corporate Author : SPRAGUE ELECTRIC CO NORTH ADAMS MA
Personal Author(s) : Lehovic, K. ; Lindmayer, J.
Report Date : SEP 1967
Pagination or Media Count : 130
Abstract : Surface charge migration on the outer oxide surface was studied by means of the time dependence of charge and discharge currents of an MOS structure. The method was tested by placing a probe electrode on the oxide near the charging electrode and observing the time dependence of the probe voltage buildup after a DC potential was applied to the charging electrode. Reasonable agreement was found between surface resistance obtained by this method and that obtained from the charge-discharge method. Some indications of a distributed capacitance (possibly due to a dipole layer on the outer oxide surface) were obtained. Dependence of the density and capture cross section of interface states and the amount of oxide charge on different sample preparations was studied. The limitations of the high-frequency parallel conductance technique are discussed in detail. A tunneling model is proposed to explain the experimental data. Anneal procedures at high and low temperatures strongly influence the properties of the fast states, but different electrode metals have no such influence. As far as oxide states are concerned, the C-V curves provide a sensitive means to detect variations in sample preparation.
Descriptors : (*SEMICONDUCTORS, SURFACE PROPERTIES), (*OXIDES, METALS), EVAPORATION, CHROMIUM, STABILITY, ELECTRODES, VOLTAGE, ELECTRICAL RESISTANCE, DENSITY, SENSITIVITY, INTERFACES, LEAKAGE(ELECTRICAL), HUMIDITY, GOLD, ELECTRIC DISCHARGES, PENETRATION, DOPING, SILICON DIOXIDE, HIGH TEMPERATURE, ANNEALING, DAMAGE, RADIATION EFFECTS, ALUMINUM, SUBSTRATES.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE