Accession Number : AD0821631
Title : DIODE CHARACTERISTICS FROM JUNCTION IMPEDANCE MEASUREMENTS.
Descriptive Note : Interim rept.,
Corporate Author : CORNELL UNIV ITHACA NY
Personal Author(s) : Mitschang, George W.
Report Date : SEP 1967
Pagination or Media Count : 88
Abstract : Reverse bias impedance measurements were made on GaAs epitaxial diodes and on diffused Silicon diodes in the frequency range from 89 MHz to 245 MHz. The results were used to calculate the depletion region capacitance, the impurity atom profile, and the electric field profile of the junctions. The peak electric field at the start of avalanche breakdown was found to be about 5.3 x 100,000 v/cm for the GaAs diodes and approximately 2.5 x 100,000 v/cm for the Silicon diffused diodes. The change in diode impedance due to the effect of the DC avalanche current was observed and both the GaAs and the Si diodes changed their reactances from capacitive to inductive as the bias current was increased. The series resistance of the diodes was also found to reach a maximum value in this region. Comparison of these results with avalanche diode theory, including the effect due to junction loss has been made with good correlation. (Author)
Descriptors : (*AVALANCHE DIODES, SILICON), EPITAXIAL GROWTH, GALLIUM ARSENIDES, MEASURING INSTRUMENTS, ELECTRIC FIELDS, ELECTRICAL RESISTANCE.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE