Accession Number : AD0822016
Title : MICROWAVE DIODE RESEARCH.
Descriptive Note : Interim rept. no. 4, 10 Sep 66-9 Mar 67,
Corporate Author : WESTERN ELECTRIC CO INC NEW YORK
Personal Author(s) : Ciccolella, D. F. ; Gibbons, G. ; Rulison, R. L.
Report Date : OCT 1967
Pagination or Media Count : 31
Abstract : Work on the fabrication and tests of improved silicon INPATT oscillators is described in Chapter I. Effort has been concentrated on the p-n diode structure because of advantages in process yield and in diode performance. A new and more rugged encapsulation has been used for most of the diodes fabricated in this period; this facilitates circuit mounting and thermal design. In this encapsulation a single silicon diode has provided 1500-mW cw output power, and many units in the 4-to 6-GHz range have given power output greater than one watt. Fabrication and test results obtained with germanium p-n IMPATT diodes, supported in part by the present contract, are reported in Chapter II. This work has resulted in the highest cw efficiency (12.1 percent) so far obtained with IMPATT devices, and cw power output in excess of 500 mW at 6 GHz. Thermal dissipation problems are more severe with germanium than silicon; the average burnout temperature appears to be about 150 C. (Author)
Descriptors : *MICROWAVE OSCILLATORS), (*AVALANCHE DIODES, THERMAL STRESSES, SILICON, ENCAPSULATION, RADIOFREQUENCY POWER, GERMANIUM, SUPERHIGH FREQUENCY, EFFICIENCY, THERMAL PROPERTIES, PACKAGING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE