Accession Number : AD0823120

Title :   MICROWAVE TRANSISTORS.

Descriptive Note : Rept. no. 8 (Final) 1 Jun 65-31 May 67,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Anderson, Andy ; Boone, David ; Cooke, Harry ; Dennis, Charlie ; Lange, Julius

Report Date : NOV 1967

Pagination or Media Count : 132

Abstract : Planar double-diffused transistors were fabricated using phosphorus-doped silicon dioxide as a mask. Some of the better devices exhibited the following microwave performance: unilateral gains of 10.0 dB at 3 GHz and 5.4 dB at 6 GHz; maximum available gains of 6.5 - 7.0 dB at 3 GHz and 2.0 - 2.2 dB at 6 GHz; noise figures of 6.6 - 7.4 dB at 3 GHz and 8.5 - 11.6 dB at 6 GHz. Epitaxial growth techniques, silicon nitride masks, and heavily doped base contact areas were investigated. Improved microwave transistor packages were developed. A microwave measurements study program was undertaken. S-band and C-band receiver front ends were completed and delivered. (Author)

Descriptors :   *TRANSISTORS), (*MICROWAVE EQUIPMENT, (*MANUFACTURING, TRANSISTORS), S BAND, C BAND, GERMANIUM, SEMICONDUCTORS, AMPLIFIERS, MASKING, DIFFUSION, SILICON DIOXIDE, DOPING, PHOSPHORUS, NOISE(RADIO), EPITAXIAL GROWTH, SILICON COMPOUNDS, NITRIDES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE