Accession Number : AD0823389

Title :   COMMON-EMITTER L-BAND SMALL-SIGNAL SILICON TRANSISTOR AMPLIFIER.

Descriptive Note : Semiannual rept. no. 1, 10 Jan-10 Jul 67,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Anderson, A. J. ; Lange, Julius

Report Date : NOV 1967

Pagination or Media Count : 24

Abstract : Using the 2.5-millimicron L-83 and L-153B device geometries, devices were fabricated in the TI-Line package, with common emitter power gain up to 11 dB at 2 GHz. Use of the miniature coaxial package gave devices with power gains up to 13 dB at 2 GHz. Photomasks are on order which will be more usable than the 1.25-millimicron geometry and will represent sufficient improvement over existing device geometries to permit the realization of 14 dB gain at 2 GHz.

Descriptors :   (*TRANSISTOR AMPLIFIERS, RELIABILITY(ELECTRONICS)), GAIN, MINIATURE ELECTRONIC EQUIPMENT, L BAND, SILICON, DIFFUSION BONDING, CAPACITANCE, SPECIFICATIONS, ELECTRICAL PROPERTIES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE