Accession Number : AD0823775

Title :   SINGLE CRYSTAL SILICON FILMS ON INSULATING SUBSTRATES (FOLLOW ON PROGRAM).

Descriptive Note : Rept. for 1 Aug-31 Oct 67.

Corporate Author : AUTONETICS ANAHEIM CA

Report Date : 31 OCT 1967

Pagination or Media Count : 36

Abstract : Space charge limited silicon-on-sapphire MOS transistors have been fabricated with transconductances of 950 micromhos and voltage amplification factors of 38. Further development has been conducted on diffused bipolar transistors using new masks with 2.5 micron line widths. Processing has started on an integrated circuit which will compare silicon-on-sapphire with an identical circuit in bulk silicon. Development of an extensive phosphorus ion injection technology is in progress, to complement the boron ion doping capability previously established. Injection of phosphorus ions at energies up to 400 kev now permits formation of emitter structures in either ion-injected or diffusion-doped p-type base regions in silicon-on-sapphire material. Planar three-layer (bipolar) structures have been formed by sequential injection both of boron and sodium ions and of boron and phosphorus ions into appropriately masked samples. The boron ion doping studies at energies up to 400 kev have been continued in a variety of epitaxial layers.

Descriptors :   *CRYSTAL GROWTH), (*SEMICONDUCTING FILMS, (*SILICON, SEMICONDUCTING FILMS), (*INTEGRATED CIRCUITS, SEMICONDUCTING FILMS), SUBSTRATES, SAPPHIRE, DOPING, BORON, PHOSPHORUS, IONS, INJECTION, TRANSISTORS, MICROSTRUCTURE, ELECTRON DIFFRACTION.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE