Accession Number : AD0824455

Title :   SEMICONDUCTOR LASER ARRAY TECHNIQUES (SEMLAT).

Descriptive Note : Final rept. May 66-Sep 67,

Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY

Personal Author(s) : Collins, N. E. ; Jones, J. E. ; Kim, H. B. ; Magdo, S. ; Mallory, W. R.

Report Date : NOV 1967

Pagination or Media Count : 96

Abstract : The primary objective of the program was to determine the feasibility of a cascaded semiconductor array amplification scheme. The results of an extensive materials investigation led to a further understanding of many of the factors relating GaAs material characteristics to laser diode performance. A system comprised of a GaAs master oscillator laser driving two linear ten-diode amplifying arrays was constructed. The system was evaluated by the performance of a cascaded two-element beam amplification experiment. The results of this experiment successfully demonstrated the feasibility of coherent cascaded array amplification.

Descriptors :   (*LASERS, SEMICONDUCTOR DEVICES), (*SEMICONDUCTOR DIODES, LASERS), GALLIUM ARSENIDES, SEMICONDUCTORS, AMPLIFIERS, OSCILLATORS, CRYOGENICS, ARSENIDES, FILMS, SILICON COMPOUNDS, COATINGS, OPTICAL PROPERTIES.

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE