Accession Number : AD0824455
Title : SEMICONDUCTOR LASER ARRAY TECHNIQUES (SEMLAT).
Descriptive Note : Final rept. May 66-Sep 67,
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY
Personal Author(s) : Collins, N. E. ; Jones, J. E. ; Kim, H. B. ; Magdo, S. ; Mallory, W. R.
Report Date : NOV 1967
Pagination or Media Count : 96
Abstract : The primary objective of the program was to determine the feasibility of a cascaded semiconductor array amplification scheme. The results of an extensive materials investigation led to a further understanding of many of the factors relating GaAs material characteristics to laser diode performance. A system comprised of a GaAs master oscillator laser driving two linear ten-diode amplifying arrays was constructed. The system was evaluated by the performance of a cascaded two-element beam amplification experiment. The results of this experiment successfully demonstrated the feasibility of coherent cascaded array amplification.
Descriptors : (*LASERS, SEMICONDUCTOR DEVICES), (*SEMICONDUCTOR DIODES, LASERS), GALLIUM ARSENIDES, SEMICONDUCTORS, AMPLIFIERS, OSCILLATORS, CRYOGENICS, ARSENIDES, FILMS, SILICON COMPOUNDS, COATINGS, OPTICAL PROPERTIES.
Subject Categories : Electrical and Electronic Equipment
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE