Accession Number : AD0824872
Title : THE APPLICATION OF MOLECULAR RADIATION IN THE PRODUCTION OF P-N TRANSITIONS BY EVAPORATING GERMANIUM TO A DESIRED DEGREE OF DOPING ON A MONOCRYSTALLINE GERMANIUM SUPPORT OF THE OPPOSITE CONDUCTION TYPE,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH
Personal Author(s) : Poser, H.
Report Date : 21 JUL 1967
Pagination or Media Count : 6
Abstract : The article reports on previous research in the field and on the preparation of p-n junctions by vapor-coating special germanium substrates with germanium of opposite conductance type. The investigation was carried out in vacuum. As substrates, (111)-oriented, n-conducting germanium single-crystal plates with a resistivity of 4 ohm cm were used and the condensation surfaces were polished and chemically etched Germanium of p-type, with a resistivity of 0.004 ohm cm, was used for vapor coating. Heat was supplied via electron bombardment. The excess gas pressure in the recipient was around 0.00005 Torr, and the thickness of the deposited layers around 5 millimicrons. The current-voltage characteristics of the deposited layers were determined from the contacted specimens. The inverse current at 1 V was 20 microamps, which corresponds to a current density of 0.12 mA/sq cm. (Author)
Descriptors : *VAPOR PLATING), (*SEMICONDUCTORS, MOLECULAR ELECTRONICS), (*GERMANIUM, EPITAXIAL GROWTH, SUBSTRATES, SINGLE CRYSTALS, ELECTRON IRRADIATION, THICKNESS, ELECTRICAL PROPERTIES, DOPING, EAST GERMANY.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE