Accession Number : AD0825274

Title :   ELEMENT DEVELOPMENT FOR ADVANCED ASSOCIATIVE MEMORIES.

Descriptive Note : Final rept.,

Corporate Author : MARQUARDT CO VAN NUYS CA

Personal Author(s) : Haas, Ralph W. ; Hanlet, Jacques M.

Report Date : DEC 1967

Pagination or Media Count : 175

Abstract : A research and development program to develop materials and investigate their use in an electro-optical associative processor is described. An analytical study evaluates the logic application of electro-optical memory cells in a processor organization and examines the various tradeoffs in design. The material effort directed toward the development of thin film photoconductor and ferroelectric materials is discussed. The effort culminated in the definition of fabrication process for a cadmium sulfide photoconductor that can switch a ferroelectric element in 30 micro-seconds with a 2 foot-candle illumination and a process for a new ferroelectric material. These materials were demonstrated with a thin film processor model. (Author)

Descriptors :   *ELECTROOPTICS), (*MEMORY DEVICES, MANUFACTURING, PHOTOCONDUCTIVITY, FERROELECTRIC MATERIALS, CADMIUM SULFIDES, COMPUTER LOGIC, EXCITATION, EPITAXIAL GROWTH, FILMS, SHIFT REGISTERS, ELECTROLUMINESCENCE, DATA STORAGE SYSTEMS, CRYSTAL STRUCTURE, VAPOR PLATING, VACUUM APPARATUS.

Subject Categories : Computer Hardware
      Crystallography
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE