Accession Number : AD0825784
Title : SEMICONDUCTOR LASER MODULATION TECHNIQUES.
Descriptive Note : Final rept. 31 Jan-31 Jul 67,
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY ELECTRONICS LAB
Personal Author(s) : Mallory, William
Report Date : DEC 1967
Pagination or Media Count : 87
Abstract : The report summarizes results for the entire program. The program involved theoretical and experimental analysis to identify the attributes and limitations of semiconductor modulation techniques. Important factors considered were bandwidth, efficiency, noise and distortion. A breadboard model was built utilizing a lead-zirconate-titanate ceramic piezoelectric modulator packaged with a GaAs laser diode in a good thermal laser/modulator unit. A linear wavelength shift of 0.001 Angstroms per volt of modulator voltage was obtained at 77K and 4.2K. A maximum shift in excess of 0.1 Angstrom was measured. The modulator represents a capacitive load of about 500 picofarads. An optical discriminator measurement technique used was capable of detecting frequency shifts of a few MHz. The significance of multimode laser operation is discussed. (Author)
Descriptors : *MODULATION), (*LASERS, (*SEMICONDUCTORS, LASERS), (*LASERS, OPTICAL RADAR), FREQUENCY SHIFT, MAGNETOOPTICS, ELECTROOPTICS, PRESSURE, SEMICONDUCTOR DIODES, MODULATORS, CRYOGENICS, PIEZOELECTRIC TRANSDUCERS, GALLIUM ARSENIDES.
Subject Categories : Lasers and Masers
Optical Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE