Accession Number : AD0825795
Title : FAILURE MECHANISMS IN MOS TRANSISTORS.
Descriptive Note : Final rept. 28 Mar 66-28 May 67,
Corporate Author : MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
Personal Author(s) : Clark, Lowell ; Forehand, Harry ; Sanera, Art
Report Date : DEC 1967
Pagination or Media Count : 221
Abstract : The main objectives of the study are to determine the basic failure mechanisms characteristic of silicon insulated gate field effect transistors (IGFET), identify the sources of failure, and develop techniques for reliability screening and stress testing of the finished device. The device type selected for study was the Motorola MM2103, a silicon p-channel-enhancement IGFET. Twelve failure mechanisms have been isolated during the study. Surface polarization, a major problem with the initial devices, was reduced to a nondetectable level for the final group (Unit Group III) of devices. Physical and electrical analysis of failed devices has revealed a possible method of reliability screening. (Author)
Descriptors : *FAILURE(ELECTRONICS)), (*FIELD EFFECT TRANSISTORS, RELIABILITY, SILICON, TEST METHODS, SURFACE PROPERTIES, POLARIZATION, GATES(CIRCUITS), ETCHED CRYSTALS, OXIDES, ELECTRICAL PROPERTIES, ENVIRONMENTAL TESTS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE