Accession Number : AD0826117

Title :   A SMALL SIGNAL ANALYSIS OF AMPLIFICATION IN N-TYPE GAAS.

Descriptive Note : Technical rept.,

Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Wang, Chih-Chung

Report Date : DEC 1967

Pagination or Media Count : 67

Abstract : An analytic expression for the small signal equivalent impedance of an n-type GaAs diode is found by piecewise linearizing the characteristic of the average drift velocity of the electron as function of the electric field. The calculated results are in agreement with the observed amplification characteristics. It is found that the boundary condition is important in determining the mode of operation. A zero cathode field leads to amplification at an applied voltage near the threshold value, and a finite cathode field leads to amplification at prethreshold voltages. (Author)

Descriptors :   *SEMICONDUCTOR DIODES), (*MICROWAVE AMPLIFIERS, (*GALLIUM ARSENIDES, SEMICONDUCTOR DIODES), SOLID STATE PHYSICS, ELECTRIC FIELDS, BAND THEORY OF SOLIDS, ELECTRONS, ELECTRICAL IMPEDANCE, BOUNDARY VALUE PROBLEMS, PERTURBATION THEORY.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE