Accession Number : AD0826723
Title : DEVELOPMENT OF A 1-WATT, 2 GHZ SILICON UHF POWER TRANSISTOR.
Descriptive Note : Final rept. 1 Aug 65-15 Jul 67,
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
Personal Author(s) : McGeough, P. L. ; Lee, H. C.
Report Date : FEB 1968
Pagination or Media Count : 89
Abstract : A 1-watt, 2-gigahertz device, coaxial transistor, having 6- to 7-dB power gain and 30- to 40-percent collector efficiency was developed in this program. This significant increase in UHF device performance is the result of technology developed during shallow diffusion and epitaxial material studies. The transistor is enclosed in a hermetic coaxial package, developed during the package study phase of this program. (Author)
Descriptors : (*TRANSISTORS, MANUFACTURING), PERFORMANCE(ENGINEERING), EPITAXIAL GROWTH, ELECTRICAL PROPERTIES, MICROWAVE FREQUENCY, FAILURE(ELECTRONICS), RELIABILITY(ELECTRONICS), EFFICIENCY, DIFFUSION, BANDWIDTH, OPTIMIZATION.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE