Accession Number : AD0827343

Title :   300C SEMICONDUCTOR FOR POWER DEVICES.

Descriptive Note : Final technical rept. 1 Jul 66-30 Sep 67,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s) : Enstrom, R. E. ; Krassner, L. A.

Report Date : FEB 1968

Pagination or Media Count : 94

Abstract : The successful design and development of a 50-ampere rectifier with reverse breakdown over 150 volts, operable in a 300C ambient temperature, is described. High-operating-temperature and reverse-breakdown requirements led to the choice of gallium arsenide and gallium arsenide-phosphide as the semiconductor materials employed. The rectifier junctions were grown by vapor phase epitaxial techniques, and very-high breakdown voltage was achieved. Growth of defect-free large-area (0.175-mil diameter) junctions was a major accomplishment. A complete process for rectifier fabrication was developed, including etching, contacting, mounting, and junction coating techniques. The results of mechanical, electrical, and environmental tests are presented. (Author)

Descriptors :   *RECTIFIERS), (*SEMICONDUCTOR DIODES, HIGH TEMPERATURE, MANUFACTURING, EPITAXIAL GROWTH, ETCHED CRYSTALS, ELECTRIC TERMINALS, GALLIUM ARSENIDES, ELECTRICAL PROPERTIES, MECHANICAL PROPERTIES, ENVIRONMENTAL TESTS.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE