Accession Number : AD0827784
Title : DEVELOPMENT OF NANOVOLT PREAMPLIFIERS FOR INFRARED DETECTORS AND SIMILAR APPLICATIONS.
Descriptive Note : Phase rept.,
Corporate Author : NAVAL AIR DEVELOPMENT CENTER WARMINSTER PA AERO-ELECTRONIC TECHNOLOGY DEPT
Personal Author(s) : Skoures, A.
Report Date : 13 FEB 1968
Pagination or Media Count : 19
Abstract : Experimental results show that bipolar, field-effect, and monolithic preamplifiers can be built with a sensitivity of 50 nanovolts per root hertz, or better, at 1000 hertz. Such preamplifiers will amplify extremely low signals generated by infrared detectors and similar units, and will keep system noise to a minimum at the same time. A sensitivity of 10 nanovolts per root hertz at 1000 hertz can be achieved with the use of the monolithic preamplifier. (Author)
Descriptors : *PREAMPLIFIERS), (*INFRARED DETECTORS, TRANSISTOR AMPLIFIERS, FIELD EFFECT TRANSISTORS, SENSITIVITY, NOISE(RADIO), CIRCUITS.
Subject Categories : Electrical and Electronic Equipment
Infrared Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE