Accession Number : AD0827937
Title : INVESTIGATION OF NEW CONCEPTS AND LINEAR BEAM TECHNIQUES FOR MICROWAVE GENERATION.
Descriptive Note : Final rept.,
Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
Personal Author(s) : Dalman, G. C. ; Eastman, L. F.
Report Date : JAN 1968
Pagination or Media Count : 126
Abstract : LSA operation at X-band yielding peak pulse powers of 615 watts, operation at S-band and a computer analysis of a resonant circuit for the LSA mode are reported. Studies of the microwave performance of a quenched mode Gunn diode has been completed. A new mode (the Hybrid mode) of operation using the bulk negative resistance of Gunn effect is proposed. This mode has some possible advantages over the LSA mode. The research on low NL product GaAs diodes has also been completed. Small and large signal admittances of silicon p-n junction diodes under avalanche breakdown conditions through S, C, and X-band frequency ranges have been measured. Studies of the high-efficiency, high-power operation of P(+)NN(+) silicon avalanche diodes as reported by workers at RCA, have been initiated. Attempts to eliminate the low field breakdown in InSb diodes observed previously have been unsuccessful. Initial preparations for measuring the microwave impedance of short samples of n-InSb are almost completed. A GaAs epitaxial growth apparatus has been put into full operation. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, MICROWAVES), SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, X BAND, INDIUM ANTIMONIDES, S BAND, EPITAXIAL GROWTH, AVALANCHE DIODES, MOBILITY, ELECTRICAL RESISTANCE, SILICON, ELECTRICAL IMPEDANCE.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE