Accession Number : AD0828018
Title : SINGLE CRYSTAL SILICON FILMS ON INSULATING SUBSTRATES (FOLLOW ON PROGRAM).
Descriptive Note : Rept. for 1 Nov 67-31 Jan 68.
Corporate Author : AUTONETICS ANAHEIM CA
Report Date : 11 JAN 1968
Pagination or Media Count : 39
Abstract : A model for the kinetics of the deposition of silicon from a silane source is proposed and supported by experimental observations. The effect of very high and very low growth rates on crystal quality has been established for a growth temperature of 1100C. The results observed are correlated with the proposed growth model. Measurements of the crystallographic perfection of high mobility (Approx. 450 sq. cm./volt sec) silicon layers have shown the deposits to be essentially free of twins but rich in other types of dislocation. Bipolar transistors have been successfully fabricated on thin films of silicon-on-sapphire during the report period. The transistors are double-diffused planar npn transistors with a conventional doping profile attained in a somewhat unusual fashion. A large number of samples of silicon-on-sapphire have been exposed to both boron and phosphorus ion injection, primarily to form bipolar transistor structures. Ion energies ranging from 60 to 400 kev have been used, and both npn and pnp configurations have been made. In most cases the boron injection has been done first, but some structures have been made in the reverse sequence. Sharp, well-defined emitter-base and base-collector junctions have been formed, indicating freedom from the characteristic irregular impurity profile fronts seen in diffused structures. (Author)
Descriptors : (*TRANSISTORS, MANUFACTURING), FILMS, SILICON, CRYSTAL GROWTH, SINGLE CRYSTALS, TEMPERATURE, DEPOSITION, SAPPHIRE, DOPING, SEMICONDUCTOR DEVICES, X RAY DIFFRACTION, ELECTRICAL PROPERTIES, ELECTRON MICROSCOPY, SUBSTRATES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE