Accession Number : AD0828299

Title :   DEPOSITION CHAMBER FOR EPITAXIAL GROWTH,

Descriptive Note : Edited translation,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s) : Eckstein, Juraj ; Polivka, Pavel ; Petrasek, Josef

Report Date : 18 AUG 1967

Pagination or Media Count : 9

Abstract : A chamber for the epitaxial deposition of thin monocrystalline semiconductors has been tested and is described. The chamber for small substrate plates is within and separated from the heating chamber (a hollow graphite cylinder which may also be made of molybdenum, tantalum, or of molybdenum disilicide). The gas medium in the outer cylinder need not be the same as that in the inner chamber, depending on the material of the heater. Intake and outlet nozzles at the ends of the inner chamber are sealed with cap nuts and packing. The substrate disks do not lie on the bottom of the inner chamber, but are placed in grooved holders which leave most of their surfaces exposed to the gas medium. These holders are made of graphite fused quartz, or of high-ohmic silicon and may be either U-shaped or shaped to fit the cylinder. Such holders make possible the deposition on both faces of the disks in one operation and in any selected system (p-n-p; n-p-n; n+-n-n+; p+-p-p+, etc.). If a deposit is desired on only one face, two disks may be placed back to back in the groove. If the disks are held at an oblique angle to the gas stream, or rotated during exposure, the epitaxial deposit will be more homogeneous and more evenly spread on all disks. Tests were also made with a reversible gas stream, which can be easily arranged with two three-way teflon cocks.

Descriptors :   *EPITAXIAL GROWTH), (*SEMICONDUCTING FILMS, MANUFACTURING, SINGLE CRYSTALS, VAPOR PLATING, GAS FLOW, EXPERIMENTAL DESIGN, CZECHOSLOVAKIA.

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE