Accession Number : AD0828540

Title :   STUDIES OF THE GROWTH OF SINGLE CRYSTAL LAYERS OF SEMICONDUCTORS ON DIELECTRIC SUBSTRATES.

Descriptive Note : Final rept. 1 Oct 65-30 Apr 67,

Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY

Personal Author(s) : Jillson, D. C. ; Russell, V. A. ; Neugebauer, C. A.

Report Date : DEC 1967

Pagination or Media Count : 114

Abstract : The purpose of this program was to increase understanding of the basic factors controlling the deposition (nucleation and growth) of single-crystal layers of semiconductors onto dielectric substrates. In addition, it was desired, if feasible, to limit nucleation to a single site, or a small number of sites, in a controlled area, and to grow laterally to desired dimensions. The means for achieving this was to be the use of a temperature gradient and/or a flux gradient across the surface of the substrate. In order to determine the conditions required for the control of nucleation in this manner and to obtain information regarding the factors affecting nucleation, critical condensation tests were performed in two systems - (a) from silane-hydrogen mixtures onto sapphire substrates, and (b) by evaporation from CdS onto sapphire and Pyrex substrates. (Author)

Descriptors :   *EPITAXIAL GROWTH), (*SEMICONDUCTORS, SILICON), (*CADMIUM SULFIDES, SUBSTRATES, DIELECTRIC PROPERTIES, FILMS, DEPOSITION, NUCLEATION, SINGLE CRYSTALS, X RAY DIFFRACTION, ELECTRICAL PROPERTIES, ELECTRON MICROSCOPY, SAPPHIRE, PHOTOMICROGRAPHY, DEPOSITS, TEMPERATURE, ELECTRICAL RESISTANCE, CONDUCTIVITY.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE