Accession Number : AD0828951

Title :   DEVELOPMENT OF AVALANCHE OSCILLATORS AT 10 GHZ AND 18.3 GHZ.

Descriptive Note : Quarterly rept. no. 2, 23 Sep-22 Dec 67,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MA

Personal Author(s) : Gilden, Meyer ; Collinet, Jean-Claude R. ; Moroney, William J.

Report Date : 08 MAR 1968

Pagination or Media Count : 24

Abstract : Avalanche diode oscillators for X-band were operated from 200 to 300 mW of power. The mesa diode construction is described. Several mechanically tuned cavities are discussed which tune approximately 1 GHz at X-band. Reduction of FM noise by high Q cavities are presented. (Author)

Descriptors :   *MICROWAVE OSCILLATORS), (*AVALANCHE DIODES, X BAND, SILICON, TUNED CIRCUITS, FREQUENCY MODULATION, NOISE(RADIO), AMPLITUDE MODULATION, SUPERHIGH FREQUENCY, PERFORMANCE(ENGINEERING), RADIOFREQUENCY POWER.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE