Accession Number : AD0830446

Title :   ADVANCED CONCEPTS OF MICROWAVE GENERATION AND CONTROL IN SOLIDS.

Descriptive Note : Quarterly rept. no. 1, 1 Oct-31 Dec 67.

Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Report Date : MAR 1968

Pagination or Media Count : 107

Abstract : Injection locking of LSA oscillators was observed and a low frequency bias circuit oscillation was also investigated. Power-frequency scaling studies of LSA diodes are discussed. Work on high cycle LSA along thin slabs of gallium arsenide is also reported. A hybrid mode in gallium arsenide characterized by having the domain formation time of the same order of magnitude as the active portion of the r-f period is discussed. Studies of the electronic characteristics of a quenched mode Gunn effect oscillator was completed. Large signal i-v characteristics of avalanche p-n junction were investigated. Studies of the effect of space charge on the efficiency of avalanche diodes are described. Avalanche transit-time phenomena in p-n InSb diodes are also discussed. The results of studies of the properties of very short samples of InSb in high electric fields are also reviewed. Results of a study of nonlinearities of semiconductor avalanches are reported. Work on materials research is described including studies of epitaxial growth of gallium arsenide and solution grown epitaxial layers of gallium arsenide are also reported. Progress on ion implantation work in silicon is discussed. Highly magnified field emission patterns of the emission from germanium whiskers were obtained. The results of microwave switching experiments using laser generated carbon plasmas are reported.

Descriptors :   (*SEMICONDUCTOR DEVICES, MICROWAVE OSCILLATORS), (*SEMICONDUCTORS, FIELD EMISSION), SEMICONDUCTOR DIODES, SPACE CHARGE, GALLIUM ARSENIDES, EPITAXIAL GROWTH, MAGNETIC PROPERTIES, SILICON, LASERS, SOLID STATE PHYSICS, GERMANIUM, ELECTRIC FIELDS.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE