Accession Number : AD0831251

Title :   ELECTRON INJECTION LASER.

Descriptive Note : Semi-annual rept. no. 3, 1 Jul-31 Dec 67,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s) : Marinace, J. C. ; Morehead, F. F. ; Rupprecht, H. ; Stern, F. ; Woodall, J. M.

Report Date : MAR 1968

Pagination or Media Count : 32

Abstract : Lasing has been attained at 77K in Ga sub 1-x Al sub x As diodes at photon energies between 1.51 and 1.65 eV. Laser operation at room temperature has not yet been attained, probably because the doping levels are still too low. The wavelength of light emitted by solution-grown diodes has been used to monitor the solution growth process. Vapor growth of GaAs with substantially increased water vapor pressure gave higher growth rates, but no significant change in quality of the grown layers. Because of the significant effect of epoxy potting on laser performance, the thermal expansion coefficients of several epoxies have been measured. The potted units appear to be under a pressure of several thousand atmospheres, but at present we cannot separate the hydrostatic and uniaxial components. Data on degradation of potted and unpotted lasers at 77K and 300K are reported. A program for calculating the electron and hole motion in a graded junction has been written, to obtain a more accurate electrical model for the injection laser. The ion implantation apparatus has been placed in operation, and electroluminescence has been found in N-implanted SiC after heat treatment. (Author)

Descriptors :   (*LASERS, FEASIBILITY STUDIES), (*GALLIUM ARSENIDES, CRYSTAL GROWTH), INJECTION, ALUMINUM, EPOXY RESINS, SELENIUM, ELECTRONS, SEMICONDUCTOR DIODES, VAPOR PLATING, DOPING, THERMAL EXPANSION, PHOTONS, HYDROSTATIC PRESSURE, COMPUTER PROGRAMS, ELECTROLUMINESCENCE, PHASE STUDIES, TRANSPORT PROPERTIES, OPTICAL PROPERTIES.

Subject Categories : Lasers and Masers
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE