Accession Number : AD0831634
Title : TRANSISTOR, VHF, SILICON, POWER, LINEAR, 100-WATT PEP, 76-MHZ WITH 10-DB POWER GAIN.
Descriptive Note : Final rept. Sep 66-Feb 68,
Corporate Author : RCA ELECTRONIC COMPONENTS SOMERVILLE NJ
Personal Author(s) : Chang, Z. F. ; Katnack, F. L.
Report Date : APR 1968
Pagination or Media Count : 104
Abstract : The design, fabrication and testing of a high-power transistor suitable for single-sideband operation at 76 MHz are discussed. This transistor, designated the TA7117, is of an overlay construction and incorporates a diffused, integrated-ballast resistor, integral emitter and base leads, and internally mounted, low-conductance diode for temperature compensation. The design of a high-power, two-tone test amplifier with bias control is detailed and the test results on the final transistors are given. The TA7117 transistor has demonstrated a capability of 100 watts PEP with 9.5 dB gain at -28 dB intermodulation distortion and an efficiency of 70 percent. The design of a high-power, linear amplifier using the TA7117 transistor is discussed. This amplifier is capable of WPEP with -46 dB IMD. The combination of this driver with a TA7117 final amplifier stage demonstrates a solid state linear amplifier capability of 1 milliwatt PEP to 100 watts PEP. (Author)
Descriptors : (*TRANSISTORS, SILICON), (*TRANSISTOR AMPLIFIERS, VERY HIGH FREQUENCY), RADIOFREQUENCY POWER, LINEAR SYSTEMS, VOLTAGE, GAIN, CAPACITANCE, POWER AMPLIFIERS, PACKAGING, MANUFACTURING, SINGLE SIDEBAND COMMUNICATIONS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE