Accession Number : AD0832793

Title :   COMMON-EMITTER L-BAND SMALL-SIGNAL SILICON TRANSISTOR AMPLIFIER.

Descriptive Note : Rept. no. 2 (Final), 10 Jan 67-1 Feb 68,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Anderson, A. J. ; Dennis, Charles F. ; Lange, Julius

Report Date : MAY 1968

Pagination or Media Count : 39

Abstract : NPN double-diffused silicon microwave transistors were fabricated using 2.5-micrometers and 1.9-micrometers widths and spacings. The 2.5-micrometers devices had common-emitter maximum available gains of up to 13.0 dB at 2.0GHz. The 1.9-micrometers devices had gains of up to 12.6 dB in the TI-Line package and up to 14.3 dB in the miniature coaxial package. The devices exhibited 2.0GHz noise figures as low as 3.5 dB. (Author)

Descriptors :   (*TRANSISTOR AMPLIFIERS, MICROWAVE AMPLIFIERS), SILICON, MODULES(ELECTRONICS), MINIATURE ELECTRONIC EQUIPMENT, DIFFUSION, NOISE(RADIO), ELECTRICAL PROPERTIES, L BAND, MANUFACTURING, GAIN.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE