Accession Number : AD0832793
Title : COMMON-EMITTER L-BAND SMALL-SIGNAL SILICON TRANSISTOR AMPLIFIER.
Descriptive Note : Rept. no. 2 (Final), 10 Jan 67-1 Feb 68,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS
Personal Author(s) : Anderson, A. J. ; Dennis, Charles F. ; Lange, Julius
Report Date : MAY 1968
Pagination or Media Count : 39
Abstract : NPN double-diffused silicon microwave transistors were fabricated using 2.5-micrometers and 1.9-micrometers widths and spacings. The 2.5-micrometers devices had common-emitter maximum available gains of up to 13.0 dB at 2.0GHz. The 1.9-micrometers devices had gains of up to 12.6 dB in the TI-Line package and up to 14.3 dB in the miniature coaxial package. The devices exhibited 2.0GHz noise figures as low as 3.5 dB. (Author)
Descriptors : (*TRANSISTOR AMPLIFIERS, MICROWAVE AMPLIFIERS), SILICON, MODULES(ELECTRONICS), MINIATURE ELECTRONIC EQUIPMENT, DIFFUSION, NOISE(RADIO), ELECTRICAL PROPERTIES, L BAND, MANUFACTURING, GAIN.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE