Accession Number : AD0833283
Title : AU-ZNTE SCHOTTKY BARRIER FABRICATION BY LOW-ENERGY ION ETCHING TECHNIQUES.
Descriptive Note : Master's thesis,
Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Personal Author(s) : Mannex, Henry R.
Report Date : MAR 1968
Pagination or Media Count : 53
Abstract : A new method for semiconductor surface preparation for fabrication of metal-semiconductor rectifying heterojunctions is proposed and junctions of gold on gallium arsenide and gold on zinc telluride have been analyzed. The barrier heights for Au-GaAs diodes fabricated by low-energy (100 eV) ion etching of GaAs surfaces immediately prior to metalization were found to be in excellent agreement with barriers height of diodes fabricated by vacuum cleaving techniques. The most probable value of barrier height for Au-ZnTe structures fabricated by the ion etching technique was determined to be 0.48 eV with a maximum deviation of 0.03 eV. (Author)
Descriptors : (*CRYSTAL RECTIFIERS, ETCHING), SEMICONDUCTORS, MANUFACTURING, METAL FILMS, SPUTTERING, GOLD, GALLIUM ARSENIDES, SEMICONDUCTOR DIODES, BAND THEORY OF SOLIDS, SURFACES, THESES.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE