Accession Number : AD0833967

Title :   STRUCTURAL CHANGES OF VAPOR-DEPOSITED GE LAYERS IN THE ELECTRON MICROSCOPE,

Corporate Author : GENERAL DYNAMICS/ASTRONAUTICS SAN DIEGO CA

Personal Author(s) : Fischer, E. W. ; Richter, R.

Report Date : NOV 1959

Pagination or Media Count : 32

Abstract : Amorphous vapor-deposited Ge layers may be structurally changed in the electron microscope under the influence of the imaging electron beam. Depending on the experimental conditions, the following changes are possible: (1) conversion: amorphous to finely crystalline; (2) collective crystallization; (3) twin formation; (4) crystallization from the vapor phase. These structural changes were investigated with the Siemens-Supermicroscope (Um 21, early construction). A miniature camera built into the plate lock of the microscope, was used for photographic reproduction of the individual phases. The twin elements were determined not only by means of the usual brightfield photographs of the Ge layers, but also by means of combination photographs consisting of a shadow image and a diffraction image. Using a suitable evaluation method, it was possible to show that twin formation exists in collectively crystallized Ge layers, in which the (111)-plane appears as twinning plane.

Descriptors :   *CRYSTALLIZATION), (*GERMANIUM, (*ELECTRON MICROSCOPY, GERMANIUM), VAPOR PLATING, VACUUM APPARATUS, ELECTRON IRRADIATION, TWINNING(CRYSTALLOGRAPHY), PHOTOGRAPHIC ANALYSIS, PHASE STUDIES, SEMICONDUCTING FILMS, EAST GERMANY.

Subject Categories : Physical Chemistry
      Crystallography
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE