Accession Number : AD0834322

Title :   OHMIC CONTACTS FOR GALLIUM ARSENIDE DEVICES.

Descriptive Note : Research and development rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH NJ

Personal Author(s) : Klohn, Kenneth L. ; Wandinger, Lothar

Report Date : APR 1968

Pagination or Media Count : 17

Abstract : A study was made of various metals and metal alloys (Ag, Ni, In, and Au-Zn) which would make ohmic contacts to p- or n-type GaAs to determine the value of contact resistivity as a function of substrate impurity concentration. Contact resistivity values for p-type material varied from 1.2 x 10 to the -4th power ohm-cm sq for 2.8 x 10 to the 17th power/cc to 7.3 x 10 to the -7th ohm-cm sq for 9 x 10 to the 19th power/cc , and for n-type material from 2.5 x 10 to the -4th power ohm-cm sq for 1 x 10 to the 17th power/cc to 1.5 x 10 to the -5th power ohm-cm sq for 3 x 10 to the 18th power/cc. The metals were applied by evaporation or plating and followed by microalloying. The improvement in contact resistivity, as substrate impurity concentration increases, indicates the desirability of incorporating a thin, heavily doped region at the surface of a device by means of diffusion or epitaxy. The improvement in power output for a typical laser diode and its modified versions resulting from the reduction in R sub s is compared. (Author)

Descriptors :   *ELECTRIC TERMINALS), (*SEMICONDUCTOR DEVICES, GALLIUM ARSENIDES), (*GALLIUM ARSENIDES, BAND THEORY OF SOLIDS, ELECTRICAL RESISTANCE, VAPOR PLATING, CRYSTAL GROWTH, VARACTOR DIODES, LASERS, MICROWAVE OSCILLATORS, TUNNEL DIODES, AVALANCHE DIODES, IMPURITIES, SUBSTRATES, DIFFUSION.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE