Accession Number : AD0835274

Title :   STUDY OF NOISE IN SEMICONDUCTOR DEVICES.

Descriptive Note : Semiannual technical rept. no. 5, 16 Sep 67-15 Mar 68,

Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : VAN DER Ziel, A.

Report Date : JUN 1968

Pagination or Media Count : 41

Abstract : The noise parameters of several junction gate FET's have been determined. Experimental MOS FET tetrodes show a large amount of 1/f noise at lower frequencies, but the high-frequency noise is quite acceptable. Silicon current limiter diodes show the same noise behavior as a junction FET, as expected theoretically. The circuit parameters of microwave transistors, such as the base resistance rb, were determined from noise measurements at 5 MHz. The agreement with other parameter measurements is very good. The current dependence of the 1/f noise in the base current of silicon transistors at elevated temperatures is quite comparable with the current dependence of the shot noise. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, NOISE), FIELD EFFECT TRANSISTORS, TETRODES, CURRENT LIMITERS, SEMICONDUCTOR DIODES, MICROWAVE EQUIPMENT, HIGH FREQUENCY, TEMPERATURE, ELECTRICAL IMPEDANCE.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE