Accession Number : AD0836042
Title : FORMATION OF THIN-FILM ACTIVE DEVICES BY VACUUM TECHNIQUES,
Corporate Author : MELPAR FALLS CHURCH VA
Personal Author(s) : Wilson, Herbert L.
Report Date : 1965
Pagination or Media Count : 170
Abstract : In the period of February 8th through 12th three U.S. Naval Avionics Facility (NAFI) personnel were given detailed instruction on the techniques and instructions applicable to the formation and characterization of active (TFT) devices. Details of the equipment, materials, vendors, deposition procedure, monitoring techniques and device characterization were given by Melpar personnel. In addition information relating to the Hall Mobility measuring equipment and circuit, sensitive Field-Effect detection circuit, substrate cleaning procedure, molybdenum flatness specifications and etching procedures were furnished. Articles covering much of the active device work carried out at Melpar were furnished to NAFI personnel. Approximately 30 tellurium, and 100 cadmium selenide devices were formed under the observation of NAFI personnel. Of the devices formed approximately sixty percent of the units were very active (gm to 1000 micro mhos for Te units and to 10,000 micro mhos for CdSe units). Approximately one third of the CdSe units were formed in the large production unit. All other devices were formed in small vacuum units (10 inch bell jar units). (Author)
Descriptors : (*INTEGRATED CIRCUITS, MANUFACTURING), (*FIELD EFFECT TRANSISTORS, MANUFACTURING), INSTRUCTION MANUALS, VAPOR PLATING, VACUUM APPARATUS, SEMICONDUCTING FILMS, DIELECTRIC FILMS, SILICON COMPOUNDS, CADMIUM SELENIDES, TELLURIUM, OXIDES, SUBSTRATES, HALL EFFECT, MOBILITY, PERFORMANCE(ENGINEERING).
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE