Accession Number : AD0836648

Title :   INVESTIGATION OF NEW CONCEPTS AND LINEAR BEAM TECHNIQUES FOR MICROWAVE GENERATION.

Descriptive Note : Technical rept.,

Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Dalman, G. C. ; Eastman, L. F.

Report Date : JUN 1968

Pagination or Media Count : 110

Abstract : Research was conducted on Gunn oscillators. Peak pulse powers of 1.2 kw at 7.72 GHz are reported from 775 micron thick LSA operated bulk samples of GaAs. Work on LSA, hybrid, and transit-time modes of oscillation with epitaxial GaAs material is also discussed. In studies of avalanche diodes, a static negative differential resistance at high current levels due to space charge feedback has been observed. Direct measurements of large-signal avalanche current waveforms made on silicon diodes are also reported as well as multiplication-factor measurements on large-area silicon avalanche diodes. Measurements of the Hall mobility in GaAs have been correlated with mobility measurements using a magnetoresistance technique. Measurements were made on Ge and GaAs samples having three different resistivities. Research on GaAs crystal growing by solution regrowth and vapor phase methods are also reported. Work on ion implantation is also reported. GaAs has been successfully used as a field emission cold cathode. Results showing the feasibility of high power microwave switches triggered by lasers are summarized. (Author)

Descriptors :   *SEMICONDUCTOR DIODES), *MICROWAVES), (*MICROWAVE OSCILLATORS, (*SEMICONDUCTORS, GALLIUM ARSENIDES, SILICON, MOBILITY, ELECTRICAL PROPERTIES, CRYSTAL GROWTH, COLD CATHODE TUBES, RADIOFREQUENCY POWER.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE