Accession Number : AD0840070

Title :   LOW-NOISE MICROWAVE TRANSISTORS.

Descriptive Note : Semiannual rept. no. 1, 10 Nov 67-9 May 68,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Dennis, Charley F. ; Lange, Julius

Report Date : SEP 1968

Pagination or Media Count : 24

Abstract : A number of NPN double-diffused silicon microwave transistors were fabricated using 1.9-micro meters widths and spacings. These devices had common-emitter maximum available gains up to 11.5 dB at 3 GHz. The 6.0-GHz gain was extrapolated to be approximately 5.5 dB. These measurements were obtained from devices mounted in the miniature coaxial package. (Author)

Descriptors :   (*TRANSISTORS, MICROWAVE FREQUENCY), NOISE(RADIO), SILICON, TRANSISTOR AMPLIFIERS, MANUFACTURING.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE