Accession Number : AD0840793
Title : DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.
Descriptive Note : Final engineering rept.,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS
Personal Author(s) : Hutchins, Charles
Report Date : SEP 1968
Pagination or Media Count : 58
Abstract : Power MOSFET's (P-channel enhancement), buried-gate FET'S, and conventional junction-gate FET's were examined to determine which structure is best suited for a high power, high frequency amplifier. The buried-gate FET proved very difficult to process for desirable electrical characteristics. Characteristics reported on the other structures include dc, small-signal Y parameters, calculated power gain, power amplifier measurements, and switching circuit measurements. The power MOSFET structures tested for this contract achieved up to 30 W RF output at 30 MHz with very low distortion characteristics. Small signal JG-FET units gave 1 W output at 175 MHz with similarly low distortion characteristics. Changing the MOSFET to an improved geometry layout and to N-channel depletion mode (Class AB RF operation) looks promising for an RF linear amplifier. (Author)
Descriptors : (*FIELD EFFECT TRANSISTORS, TRANSISTOR AMPLIFIERS), EPITAXIAL GROWTH, POWER AMPLIFIERS, GAIN, SWITCHING CIRCUITS, RADIOFREQUENCY POWER, PERFORMANCE(ENGINEERING).
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE