Accession Number : AD0842836

Title :   Electron Injection Laser.

Descriptive Note : Final rept. 1 Jan-30 Jun 68,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s) : Marinace, J. C. ; Morehead, F. F. ; Stern, F. ; Woodall, J. M.

Report Date : SEP 1968

Pagination or Media Count : 68

Abstract : This report covers in detail the work carried out in the fourth and final semiannual period of the contract, and summarizes the work described in the three prior semiannual reports. Epitaxial growth of Ga(1-x)Al(x)As has been successful over a wide range of values of x, and for junctions and structures with both uniform and graded composition. The electrical, optical, and luminescent properties of the resulting materials have been studied, particularly the external quantum efficiency electroluminescent junctions as a function of emitted wavelength and Al mole fraction. Lasers have been made by Zn diffusion into epitaxially grown Ga(1-x)Al(x)As. A number of factors in GaAs device technology have been investigated, including contacts, structures, orientation effects, dopant effects, and degradation. Further work has been done on epoxy potting and the properties of epoxies. Implantation of S in GaAs was attempted, but did not give electroluminescent devices. A new scheme for achieving higher and more uniform doping levels in GaAs has been developed. Diffusion of radioactive Zn into a sample doped with radioactive Sn shows that the Sn distribution is perturbed near the diffusion front. Attempts to find electroluminescent light sources near 1.5 microns have not been successful. Optical transitions in impure semiconductors have been investigated, and an approximate matrix element has been formulated which gives improved agreement with experiment in some respects, but still does not account adequately for the optical properties over a wide range of photon energies and impurity concentrations. (Author)

Descriptors :   (*LASERS, GALLIUM ARSENIDES), (*GALLIUM ARSENIDES, EPITAXIAL GROWTH), DOPING, ELECTROLUMINESCENCE, FEASIBILITY STUDIES, EPOXY RESINS, OPTICAL PROPERTIES, ALUMINUM, ZINC, INJECTION, ELECTRONS, SEMICONDUCTORS.

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE