Accession Number : AD0843306

Title :   Diffusion From Doped Oxides.

Descriptive Note : Final rept. 15 Apr 67-15 Apr 68,

Corporate Author : NATIONAL CASH REGISTER CO DAYTON OH

Personal Author(s) : Kudrak, D. R.

Report Date : OCT 1968

Pagination or Media Count : 54

Abstract : The report describes the evaluation of thin films of silicon dioxide (silica) as potential diffusion sources for silicon semiconductor technology. The oxide films are deposited from an aqueous suspension of colloidal silica. Dopants are added to the suspension in the form of water-soluble compounds so that when the oxide film is applied and dried, a doped oxide film is formed. With this method the concentration of dopant in the silica is easily controlled over a wide range. The factors studied were junction depth and surface concentration as a function of oxide composition, oxide thickness, diffusion time, and diffusion temperature. Other properties of the oxide layer studied were index of refraction, etch rate, shrinkage, and densification treatments. Single and double junction devices were fabricated to illustrate the uniformity of diffusions produced by this technique. (Author)

Descriptors :   *SEMICONDUCTING FILMS), (*SILICON DIOXIDE, DIFFUSION, DEPOSITION, DOPING, SILICON, SUBSTRATES, SEMICONDUCTOR DEVICES, INTEGRATED CIRCUITS, COATINGS, SOURCES.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE