Accession Number : AD0843873
Title : The Emittance of Germanium and Silicon at Low Temperature.
Descriptive Note : Rept. for 28 Feb 67-28 Feb 68,
Corporate Author : NAVAL RADIOLOGICAL DEFENSE LAB SAN FRANCISCO CA
Personal Author(s) : Schleiger, Eugene R. ; Webb, Lyman A.
Report Date : NOV 1968
Pagination or Media Count : 40
Abstract : Emittance measurements as a function of temperature have been performed on germanium and silicon samples representing a wide range of resistivities. In general, emittance was found to increase with increasing temperature and increasing impurity level. The emittance of germanium (p and n-types) at 360 deg. K ranged from approximately 0.2 for a resistivity of 30 ohm-cm to approximately 0.6 for a resistivity of 0.1 ohm-cm. At 34 deg. K, the emittance decreased to approximately one half the above values. Silicon (p and n-types) had comparable values of emittance at 360 deg. K for resistivities of 200 ohm-cm and 0.001 ohm-cm, but at 30 deg. K the emittance values were reduced to approximately 0.03 and 0.1 respectively. The general relation between emittance, temperature, and impurity level has been explained in terms of charge carrier densities. (Author)
Descriptors : (*INFRARED WINDOWS, SEMICONDUCTORS), (*SEMICONDUCTORS, OPTICAL PROPERTIES), EMISSIVITY, GALLIUM, SILICON, DOPING, IMPURITIES, INDIUM, GOLD, CRYOGENICS, LOW TEMPERATURE.
Subject Categories : Infrared Detection and Detectors
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE