Accession Number : AD0844202
Title : Coaxial GaAs Varactor Diode.
Descriptive Note : Final rept. 6 Mar 67-6 Sep 68,
Corporate Author : RADIO CORP OF AMERICA PRINCETON NJ MICROWAVE APPLIED RESEARCH LAB
Personal Author(s) : Collard, Jacques R. ; Kuno, H. John
Report Date : NOV 1968
Pagination or Media Count : 47
Abstract : GaAs coaxial varactors with a self-contained 20 GHz resonator have been successfully constructed with nominal junction capacitances of 0.5 pf at 0 volts and punch-through voltages in excess of 15 volts. Thus, the high resonant frequency has been achieved at no sacrifice of the dynamic range of the device. Based on rf measurements at 2 GHz the capacitance of diode pairs in assembled coaxial varactors is repeatable to within plus or minus 8% with a yield of 60% and within plus or minus 2% with a yield of 20%. The cutoff frequency of balanced junctions is in excess of 600 GHz at punch-through voltage. (Author)
Descriptors : (*VARACTOR DIODES, GALLIUM ARSENIDES), PARAMETRIC AMPLIFIERS, RESONATORS, MICROWAVE FREQUENCY, EPITAXIAL GROWTH, INTEGRATED SYSTEMS, RESONANT FREQUENCY, MANUFACTURING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE