Accession Number : AD0847483

Title :   Low-Temperature Epitaxy of Silicon Junctions by Ultra-High Vacuum Techniques.

Descriptive Note : Final technical rept. 1 Sep 67-1 Sep 68,

Corporate Author : WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA

Personal Author(s) : Thomas, R. N. ; Francombe, M. H.

Report Date : NOV 1968

Pagination or Media Count : 140

Abstract : Studies of the structural and electrical properties of homoepitaxial films and junctions grown at low temperatures by sublimation in ultrahigh vacuum have been made. The crystallographic and electrical qualities of ultrahigh vacuum sublimed silicon make possible the growth of junction structures at temperatures far lower than heretofore reported. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, EPITAXIAL GROWTH), SILICON, INTERFACES, VAPOR PLATING, VACUUM APPARATUS, ANNEALING, ELECTRON DIFFRACTION, CRYSTAL STRUCTURE, ELECTRICAL PROPERTIES, SUBLIMATION.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE