Accession Number : AD0847733

Title :   50 Ampere Turn-Off Switch.

Descriptive Note : Quarterly rept. no. 4, 15 Aug-15 Nov 68,

Corporate Author : WESTINGHOUSE ELECTRIC CORP YOUNGWOOD PA SEMICONDUCTOR DIV

Personal Author(s) : New, Thorndike C. ; Desmond, Timothy J.

Report Date : 15 NOV 1968

Pagination or Media Count : 27

Abstract : The improvement of the fabrication process for the gate controlled switch has been performed as planned. The control of silicon wafer flatness, the attainment of the blocking voltage above 1000V at low leakage and a significant reduction of cathode gate shorts are described. The evaluation of the gate drive characteristics is initiated this quarter. It is emphasized that the cathode gate junction should not be driven into avalanche. In addition, the rate of rise of the gate pulse must be controlled to improve the switching time, gain and maximum turn-off current. With a 7.5 microhenry inductance in the gate circuit, the load current is substantially turned off in 4 microseconds by devices without gold doping. (Author)

Descriptors :   (*ELECTRIC SWITCHES, PERFORMANCE(ENGINEERING)), GATES(CIRCUITS), VOLTAGE, LEAKAGE(ELECTRICAL), DEGASIFICATION, ENCAPSULATION, MANUFACTURING, TRIGGER CIRCUITS, SWITCHING CIRCUITS, SILICON CONTROLLED RECTIFIERS, TEST METHODS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE