Accession Number : AD0848764
Title : Contribution to the Direct Current and Low Frequency Behavior of the MOS-Transistors,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH
Personal Author(s) : Paul, R.
Report Date : 15 AUG 1968
Pagination or Media Count : 19
Abstract : The purpose of the paper is to provide information on the dc and lf behavior of MOS transistors on the basis of model studies and experiments as reported in the literature. A study of the characteristic curves of the transistor in gate circuits indicates that it is a symmetrical component. The characteristic curves of the transistor in source circuits indicate that the concentrical MOS transistor carries less current than does the square one in the low channel length range under identical gate capacity. There is good correlation between the theoretical and experimental results on the lf quadrupole parameter of the field-effect MOS transistor with an isolated control electrode in the three basic circuit types.
Descriptors : (*TRANSISTORS, ELECTRICAL PROPERTIES), FIELD EFFECT TRANSISTORS, GATES(CIRCUITS), SEMICONDUCTORS, METALS, OXIDES, DIRECT CURRENT, LOW FREQUENCY, VERY LOW FREQUENCY, EAST GERMANY.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE