Accession Number : AD0849045
Title : A Simple Characterization of Gate-To-Substrate Impedance in Metal-Oxide-Semiconductor Structures Under Nonequilibrium Conditions.
Descriptive Note : Technical rept.,
Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS
Personal Author(s) : Andres, Kent William
Report Date : DEC 1968
Pagination or Media Count : 68
Abstract : Common to all MOS field-effect transistors and gate-controlled diodes is a metallurgical junction adjacent to the field-influenced semiconductor surface. This junction plays a very important role in determining the nature of the space-charge region beneath the entire gate. A reverse biased junction can create a condition of nonequilibrium in this region and can also act as a primary source of minority carriers for the formation of an inversion layer. This leads to the possibility of lateral ac potential variations along the surface. A distributed model is proposed to describe the influence of a reverse biased junction on the gate-to-substrate impedance measurements of an MOS device, and expressions are developed to facilitate application to actual devices. This model is capable of predicting the effects of measurement frequency, gate-to-substrate bias, junction reverse bias, and device geometry. (Author)
Descriptors : *SEMICONDUCTOR DEVICES, ELECTRICAL IMPEDANCE, MATHEMATICAL MODELS, SPACE CHARGE, BAND THEORY OF SOLIDS, SEMICONDUCTORS, METALS, OXIDES, SUBSTRATES, ELECTRODES.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE