Accession Number : AD0849861
Title : Failure Mechanism Study of Gold-Doped Planar Diodes.
Descriptive Note : Technical rept.,
Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
Personal Author(s) : Rossiter, Thomas J.
Report Date : FEB 1969
Pagination or Media Count : 30
Abstract : The purpose of this investigation was to verify the basic failure mechanisms present in a gold-doped planar diode device so as to furnish a basis for process improvement and reliability prediction. Photoresponse mapping and MOS capacitance measurements were exploited to provide information on degraded diodes. (Author)
Descriptors : (*SEMICONDUCTOR DIODES, RELIABILITY(ELECTRONICS)), FAILURE(ELECTRONICS), DOPING, GOLD, DEGRADATION, STRESSES, SEMICONDUCTORS, CAPACITANCE.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE