Accession Number : AD0849861

Title :   Failure Mechanism Study of Gold-Doped Planar Diodes.

Descriptive Note : Technical rept.,

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY

Personal Author(s) : Rossiter, Thomas J.

Report Date : FEB 1969

Pagination or Media Count : 30

Abstract : The purpose of this investigation was to verify the basic failure mechanisms present in a gold-doped planar diode device so as to furnish a basis for process improvement and reliability prediction. Photoresponse mapping and MOS capacitance measurements were exploited to provide information on degraded diodes. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, RELIABILITY(ELECTRONICS)), FAILURE(ELECTRONICS), DOPING, GOLD, DEGRADATION, STRESSES, SEMICONDUCTORS, CAPACITANCE.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE