Accession Number : AD0849967

Title :   S- and X-Band Schottky Barrier Diode Manufacturing Methods.

Descriptive Note : Final rept. 1 Jan 67-Sep 68,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MA

Personal Author(s) : Anand, Yoginder ; Howell, Charles M.

Report Date : FEB 1969

Pagination or Media Count : 102

Abstract : Silicon Schottky-barrier diodes were produced which simulate the microwave characteristics of conventional 1N21 and 1N23 point-contact diodes and are directly replaceable in existing standard mixers. In addition to the replacement diodes, both S- and X-band stripline Schottky-barrier diodes were fabricated. A pilot line was established to fabricate the diodes required for reliability testing and to supply the Air Force with 1500 diodes of each type. The diodes were characterized for mixer applications over a wide range of frequencies and powers. Laboratory pulse burnout experiments are reported. Field tests indicate that burnout is dependent on the particular radar set and is not simply related to the laboratory results. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, MANUFACTURING), SILICON, S BAND, X BAND, MICROWAVE EQUIPMENT, CRYSTAL MIXERS, STRIP TRANSMISSION LINES, CRYSTAL DEFECTS.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE