Accession Number : AD0850999

Title :   Development of Avalanche Oscillators at 10 GHz and 18.3 GHz.

Descriptive Note : Final engineering rept. 23 Jun 67-23 Dec 68,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MA

Personal Author(s) : Moroney, W. J. ; Noisten, J. ; Whitman, P. C.

Report Date : 18 APR 1969

Pagination or Media Count : 49

Abstract : Tunable avalanche oscillators for X- and Ku-bands with silicon avalanche diodes are described. The output power exceeds 200 mW for all oscillators, the highest power measured is over 300 mW. Wide-band tuning in X-band is accomplished in a low-Q resonator whereas limited tuning is possible in a high-Q cavity. The Ku-band oscillator allows for small-band tuning at about 18 GHz. Data on avalanche diode development as well as on noise measurements are described in separate sections of the report. (Author)

Descriptors :   *AVALANCHE DIODES), (*MICROWAVE OSCILLATORS, SILICON, X BAND, K BAND, RADIOFREQUENCY POWER, TUNING DEVICES, CAVITY RESONATORS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE