Accession Number : AD0851276
Title : Efficient Circuit Tuned Operation of High Doped Gunn Effect Devices,
Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
Personal Author(s) : Briggs, Franklin H.
Report Date : MAR 1969
Pagination or Media Count : 40
Abstract : The negative resistance arising in gallium arsenide transferred electron oscillators has been observed over a broadband in material of doping greater than that associated with Limited Space charge Accumulation (LSA) operation. The behavior was characterized by strong circuit dependence, as with LSA, and by high efficiency of as great as twenty percent in pulsed operation. The transition from transit-time operation to nearly LSA operation has been seen experimentally as a continuous function of circuit tuning. An expected decrease in diode capacitance has been observed during the tuning from domain transit operation to LSA. Some clues to the origin of the high efficiency are discussed. The operation of material with gold-germanium alloyed contacts is compared to that with the superior solution grown epitaxial contacts. (Author)
Descriptors : (*MICROWAVE OSCILLATORS, GALLIUM ARSENIDES), SEMICONDUCTOR DIODES, SPACE CHARGE, TUNED CIRCUITS, EFFICIENCY, DOPING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE