Accession Number : AD0851835

Title :   Development of Thin-Film Active Devices on an Improved Insulating Substrate.

Descriptive Note : Final rept. 1 Mar 68-28 Feb 69,

Corporate Author : RCA LABS PRINCETON NJ

Personal Author(s) : Cullen, Glenn W.

Report Date : APR 1969

Pagination or Media Count : 117

Abstract : A detailed study has been made of the effect of deposition conditions on the properties of 1.5-2.0 micron thick silicon films epitaxially grown on single crystal magnesium aluminate spinel substrates. The carrier mobility and the change of mobility during oxidation for 1 hr at 1100C have been used to monitor the film quality and to provide an indication of the usefulness of the composite material in device structures. (Author)

Descriptors :   *EPITAXIAL GROWTH), (*INTEGRATED CIRCUITS, SEMICONDUCTING FILMS), (*SEMICONDUCTING FILMS, SINGLE CRYSTALS, SPINEL, SUBSTRATES, SURFACE PROPERTIES, DIFFUSION, DOPING, PHOTOMICROGRAPHY, ELECTRICAL PROPERTIES, SEMICONDUCTOR DEVICES, VAPOR PLATING, X RAY DIFFRACTION, ELECTRON DIFFRACTION.

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE