Accession Number : AD0855148
Title : Avalanching in Gunn Oscillators.
Descriptive Note : Interim technical rept.,
Corporate Author : STANFORD UNIV CA MICROWAVE LAB
Personal Author(s) : Owens, John
Report Date : MAY 1969
Pagination or Media Count : 150
Abstract : Theoretical studies of the characteristics of Gunn domains have been conducted, using the simplifying assumption that the domain is invariant after its initial formation. This assumption greatly simplifies the calculation, allowing a high degree of accuracy in the solution. The solution involves the use of the most recent, experimentally derived velocity-field, and diffusion-field characteristics of the carriers involved. Using this detailed solution of the domain characteristics and data for the ionization coefficient for avalanching, which is available from experimental and theoretical studies, the domain potentials required for avalanching have been determined as a function of material characteristics. Two types of calculations have been carried out to predict avalanching within the domain. The first type of calculation is applicable to avalanching occurring in a time comparable to the time required for the domain to drift one domain width. The second type of calculation is directed toward avalanching occurring when a domain drifts for much longer periods of time, including multiple transits through a sample. Experiments have been performed to provide a check on our theoretical calculations. The characteristics of domains have been studied through the current-voltage characteristics and by using capacitive probes. (Author)
Descriptors : (*MICROWAVE OSCILLATORS, RELIABILITY(ELECTRONICS)), STABILITY, SEMICONDUCTOR DEVICES, GALLIUM ARSENIDES, MICROWAVE FREQUENCY, ELECTRIC FIELDS, ELECTRICAL PROPERTIES, AVALANCHE DIODES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE