Accession Number : AD0855150

Title :   Microwave Solid-State Device Studies.

Descriptive Note : Quarterly progress rept. no. 6, 1 Dec 68-1 Mar 69,

Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s) : Haddad, G. I.

Report Date : MAY 1969

Pagination or Media Count : 116

Abstract : This is the sixth Quarterly report on subject contract whose objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification, and control. Current tasks under this program are: Microwave noise emission from Indium Antimonide. (A special mount is described), Instabilities in Germanium, Transverse and magnetic field effects on instabilities in bulk semiconductor plasmas, Gunn effect oscillators and frequency converters. (Frequency limitations are presented), Gunn effect amplifiers (considers the effects of diffusion and thermal currents, and finite transverse dimensions on admittance calculations), High power Gunn effect devices, Avalanche-diode devices, High power avalanche diodes, High efficiency avalanche diodes, and Solid-state device construction. (Author)

Descriptors :   *AVALANCHE DIODES), (*MICROWAVE EQUIPMENT, SEMICONDUCTOR DEVICES, INDIUM ANTIMONIDES, GALLIUM ARSENIDES, OSCILLATION, BAND THEORY OF SOLIDS, GERMANIUM, STABILITY, ADMITTANCE.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE