Accession Number : AD0858368
Title : Silicon-on-Sapphire Transistor for Associative Processors.
Descriptive Note : Final technical rept. 27 Feb 68-7 May 69,
Corporate Author : RCA LABS PRINCETON NJ
Personal Author(s) : Burns, Joseph R. ; Scott, Joseph H.
Report Date : AUG 1969
Pagination or Media Count : 31
Abstract : System, circuit, and device considerations are presented as an integral part of the realization of a 4-word, 4-bit associative memory array incorporating 224 complementary MOS transistors fabricated with a unique low-temperature processing sequence appropriate for silicon-on-sapphire technology. The basic cell is designed to operate as a read-write random access memory with nondestructive read-out in addition to high-speed parallel associative search capabilities. The array is completely modular in multiples of 4 words and 4 bits and generates a mismatch signal proportional to the number of bits in error in a given word. The associative cell can be written into in less than 10 nanoseconds, and produces a minimum read-out and mismatch signal of 1 mA. (Author)
Descriptors : (*DATA STORAGE SYSTEMS, INTEGRATED CIRCUITS), (*TRANSISTORS, MANUFACTURING), MEMORY DEVICES, SEMICONDUCTING FILMS, EPITAXIAL GROWTH, SAPPHIRE, SILICON.
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE