Accession Number : AD0858382

Title :   High Capacitance Thin Film Structures.

Descriptive Note : Quarterly progress rept. no. 1, 5 Mar-4 Jun 69,

Corporate Author : GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE RESEARCH CENTE R

Personal Author(s) : Wasserman, Moe S. ; Feuersanger, Alfred E.

Report Date : AUG 1969

Pagination or Media Count : 19

Abstract : Thin-film metal-nickel oxide-metal capacitors have been prepared with the objective specific capacitance of 10 micro F/sq. in. in a multiple deposition apparatus that permits fabrication of the complete capacitors without exposure to an uncontrolled atmosphere. Current work is devoted to determining the reproducibility of the fabrication process, to the initiation of operational tests and to experiments required to refine the physical model. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, FIXED CAPACITORS), (*FIXED CAPACITORS, MANUFACTURING), NICKEL COMPOUNDS, OXIDES, FILMS, SPUTTERING.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE